UW Electrical Engineering
 
  

 
 

 
PUBLICATIONS
Review Articles and Book Chapters
  • Modeling of Nanoscale Devices, M. P. Anantram, M. Lundstrom and D. Nikonov, Proc. IEEE, v. 96, p. 1511-1550 (2008) [PDF]
  • Carbon nanotube electronic devices, M. P. Anantram and F. Leonard, Reports of Progress in Physics, v. 69, 507-561 (2006) [PDF]
  • Single Particle Transport through Carbon Nanotube Wires: Effect of Defects and Polyhedral Cap, M. P. Anantram and T. R. Govindan, “Science and Application of Nanotubes”, D. Tomanek and J. Enbody (eds.), Kluwer Academic / Plenum Publishers (1999)
  • Fundamental issues in atomic/nanoelectronic computation, M. P. Anantram and V. P. Roychowdhury, “Communication, Computing, Control and Signal Processing”, A. Paulraj, V. P. Roychowdhury and C. Shaper (eds.), Kluwer Academic Press, Boston, p. 219 (1997)
  • Scattering Theory of Mesoscopic Superconductivity, S. Datta, P. F. Bagwell and M. P. Anantram, Physics of Low Dimensional Structures Vol. 3, p. 1 (1996)
Regular Articles
Nanotechnology
  • Role of inelastic electron-phonon scattering in electron transport through ultra-scaled amorphous phase change material nanostructures, Jie Liu Xu Xu, M. P. Anantram, Journal of Computational Electronics, pages 1-7, DOI 10.1007/s10825-014-0579-7, http://dx.doi.org/10.1007/s10825-014-0579-7 [PDF]
  • Subthreshold  electron transport properties of ultrascaled phase change memory, Jie Liu, Xu Xu, M. P. Anantram, Electron Device Letters (2014) Electron Device Letters, IEEE, vol. 35, no. 5, pages 533-535, DOI 10.1109/LED.2014.2311461 [PDF]
  • A multi-scale analysis of the crystallization of amorphous germanium telluride using ab initio simulations and classical crystallization theory, Jie Liu, Xu Xu, Lucien Brush and M. P. Anantram, Journal of Applied Physics, vol. 115 , 023513 (2014) ; http://dx.doi.org/10.1063/1.4861721 [PDF]
  • Modeling of electron transport in biomolecules: Applications to DNA, with Jianqing Qi, Anantram, M. P., Qi, J. Proceedings of 2013 IEDM, IEDM13-798, p. 32.3.1 to 32.3.4, ISBN 9781479937264 [PDF]
  • H+-type and OH--type biological protonic semiconductors and complementary devices, Deng, Y., Josberger, E., Jin, J., Rousdari, A. F., Helms, B. A., Zhong, C., Anantram, M. P., Rolandi, M., Scientific Reports, Volume 3, Article number: 2481 (2013); doi:10.1038/srep02481 [PDF]
  • A nested dissection approach to modeling transport in nanodevices: Algorithms and applications, Ulrich Hetmaniuk, Yunqi Zhao, M. P. Anantram, International Journal for Numerical Methods in Engineering, vol. 95, pages 587-607, DOI: 10.1002/nme.4518 (2013) [PDF]
  • Core-shell silicon nanowire solar cells, M. M. Adachi, M. P. Anantram, K. S. Karim, Scientific Reports, volume 3, 1546, DOI: 10.1038/srep01546 (2013) [PDF]
  • Low-bias electron transport properties of germanium telluride ultrathin films, J. Liu, M. P. Anantram, Journal of Appled Physics, vol. 113, p. 063711 (2013) [PDF]
  • Unified model for conductance through DNA with the Landauer-Buttiker formalism, J. Qi, N. Edirisinghe, M. G. Rabbani, M. P. Anantram, Physical Review B, vol. 87, article no. 085404 (2013) [PDF]
  • Reversible Modulation of Spontaneous Emission by Strain in Silicon Nanowires, Shiri, D., Verma, A., Selvakumar, C. R., Anantram, M. P, Scientific Reports, Volume 2, Article Number 461, http://dx.doi.org/10.1038/srep00461 (2012) [PDF]
  • A polysaccharide bioprotonic field-effect transistor, C. Zhong, Y. Deng, A. F. Roudsari, A. Kapetanovic, M. P. Anantram & M. Rolandi, Nature Communications, Volume. 2, Article number: 476, doi:10.1038/ncomms1489 (2011) [PDF]
  • High Gain Multiple-Gate Photodetector with Nanowires in the Channel, Roudsari, AF. and Saini, S.S. and Nixon, O. and Anantram, M. P., Electron Device Letters, IEEE, volume 32, no. 3, pages 357-359 (2011) DOI 10.1109/LED.2010.2103044 [PDF]
  • Optical Properties of Crystalline-Amorphous Core – Shell Silicon Nanowires, M. M. Adachi, M. P. Anantram, and K. S. Karim, Nano Letters, vol. 10, pages 4093-7 (2010) [PDF]
  • High-field hole transport in silicon nanowires, A. Verma, A. K. Buin, and M. P. Anantram, J. Appl. Phys., vol. 106, Article no. 113713 (2009) [PDF]
  • Ballistic Quantum Simulators for Studying Variability in Nanotransistors, A. Martinez, J. R. Barker, A. Svizhenko, A. Anantram, M. Bescond, and A. Asenov, Journal of Computational and Theoretical Nanoscience, vol. 5, p. 1–22 (2008)
  • Carrier-phonon interaction in small cross-sectional silicon nanowires, A. Buin, A. Verma and M. P. Anantram, J. of Appl. Phys., vol. 104, p. 053716 (2008) [PDF]
  • Strain induced change of bandgap and effective mass in silicon nanowires, D. Shiri, Y. Kong, A. Buin, and M. P. Anantram, Appl. Phys. Lett., vol. 93, p. 073114 (2008) [PDF]
  • Enhancement of hole mobility in [110] Silicon Nanowires, A. Buin, A. Verma, A. Svizhenko and M. P. Anantram, Nano letters, vol. 8, p. 760-765 (2008) [PDF]
  • Multi-dimensional modeling of nanotransistors, M. P. Anantram and A. Svizhenko, IEEE Trans. Elec. Dev., v. 54, p. 2100-2115 (2007) [PDF]
  • A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs, A. Martinez, M. Bescond, J. R. Barker, A. Svizhenko, M. P. Anantram, C. Millar, A. Asenov, IEEE Trans. Elec. Dev., v. 54, p. 2213-2222 (2007)
  • The impact of random dopant aggregation in source and drain on the performance of ballistic DG Nano-MOSFETs: A NEGF study, A. Martinez, J. R. Barker, A. Svizhenko, M. P. Anantram, A. Asenov, IEEE Transactions on Nanotechnology, vol. 6, pages 438-444 (2007)
  • A. Martinez, J. R. Barker, A. Asenov, A. Svizhenko, M. P. Anantram, Developing a full 3D NEGF simulator with random dopant and interface roughness, Journal of Computational Electronics, v. 6, p. 215-218 (2007)
  • Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors, S. O. Koswatta, Sayed Hasan, and Mark S. Lundstrom, M. P. Anantram, Dmitri E. Nikonov, IEEE Trans. Elec. Dev., vol. 54, pages. 2339 - 2351 (2007) [PDF]
  • Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias, S. O. Koswatta, Sayed Hasan, Mark S. Lundstrom, M. P. Anantram, and Dmitri E. Nikonov, Appl. Phys. Lett., v. 89, 023125 (2006)
  • Influence of defects on nanotube transistor performance, N. Neophytou, D. Kienle, Eric Polizzi and M. P. Anantram, Appl. Phys. Lett., v. 88, p. 242106 (2006) [PDF]
  • Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors, S. O. Koswatta, Mark S. Lundstrom, M. P. Anantram and Dmitri E. Nikonov, Appl. Phys. Lett., v. 87, p. 253107 (2005)
  • Effect of scattering and contacts on current and electrostatics in carbon nanotubes, A. Svizhenko and M. P. Anantram, Phys. Rev. B, v. 72, p. 085430 (2005) [PDF]
  • Analysis of band gap formation in squashed arm-chair CNT, H. Mehrez, A. Svizhenko, M. P. Anantram, M. Elstner and T. Fraunheim, Phys. Rev. B, v. 71, 155421 (2005) [PDF]
  • Ballistic transport and electrostatics in carbon nanotubes, A. Svizhenko, M. P.Anantram, T. R.Govindan, IEEE Transactions on Nanotechnology, v. 4, p. 557 (2005)
  • Atomistic simulation of carbon nanotube field effect transistors using non equilibrium Green’s function formalism, J. Guo, S. Datta, M. P. Anantram and M. Lundstrom, Journal of Computational Electronics, v. 3, p. 373 (2005)
  • Bonding geometry and bandgap changes of carbon nanotubes under uniaxial and torsional strain,
    Liu Yang; Jie Han; Anantram, M.P.; Jaffe, R.L., Computer Modeling in Engineering & Sciences , vol. 3, p. 675 (2003)
  • Atomistic simulations with carbon nanotubes-classical, quantum, and transport modeling, Maiti, A.; Andzelm, J.; Svizhenko, A.; Anantram, M.P.; Panhuis, M., Physica Status Solidi B, Phys. Status Solidi B (Germany) , vol. 233, p. 49 (2002)
  • Electronic Transport through Carbon Nanotubes: Effects of Structural Deformation and Tube, Chirality, A. Maiti, A. Svizhenko and M. P. Anantram, Phys. Rev. Lett., vol. 88, p. 126805 (2002)
  • Nanotubes in nanoelectronics: transport, growth and modeling, M. P. Anantram, L. Delzeit, A. Cassell, J. Han and M. Meyyappan, Physica E, vol. 11, p. 118 (2001)
  • Resonant versus anti-resonant tunneling at carbon nanotube A-B-A heterostructures, N. Mingo, L. Yang, J. Han, M. P. Anantram, Physica Status Solidi B, vol. 226, p. 79 (2001)
  • Potential drop along carbon nanotube devices with current flow, N. Mingo, J. Han, M. P. Anantram, L. Yang, Surface Science, vol. 482-485, pt.2 , pp. 1130 (2001)
  • Which nanowire couples better to a metal contact: Armchair or Zigzag nanotube?, M. P. Anantram, Appl. Phys. Lett., vol. 78, p. 2055, (2001)
  • Current-carrying capacity of nanotubes, M. P. Anantram, Phys. Rev. B, vol. 62, p. 4837 (2000)
  • Coupling of carbon nanotubes to metallic contacts, M. P. Anantram, S. Datta and Y. Xue, Phys. Rev. B, vol. 61, p. 14219 (2000)
  • Transport through nanotubes with polyhedral caps, M. P. Anantram and T. R. Govindan, Phys. Rev. B, vol. 61, p. 5020 (2000)
  • Bandgap change of carbon nanotubes : Effect of small uniaxial and torsional strain, Liu Yang, M. P. Anantram, Jie Han and J. P. Lu, Phys. Rev. B, vol. 60, p. 13874 (1999)
  • Conductance in carbon nanotubes with defects: A numerical study, M. P. Anantram and T. R. Govindan, Phys. Rev. B, vol. 58, p. 4882 (1998)
  • Observation and Modeling of Single Wall Carbon Nanotube Bend Junctions, Jie Han, M. P. Anantram, R. Jaffe and H. Dai, Phys. Rev. B, vol. 57, p. 14983 (1998)
  • Transport in Carbon Nanotubes with Defects, M. P. Anantram, J. Han and T. R. Govindan, Ann. of the New York Acad. of Sc. vol. 852, p. 169 (1998)
Bio-Inspired
  • Inter-base electronic coupling for transport through DNA, H. Mehrez and M. P. Anantram, Phys. Rev. B, vol. 71, p. 115405 (2005) [PDF]
  • Electronic properties of O2 doped DNA, H. Mehrez, S. Walch and M. P. Anantram, Phys. Rev. B, vol. 72, p. 035441 (2005)
  • Influence of counter-ion-induced disorder in DNA conduction, Ch. Adessi, S. Walch and M. P. Anantram, Appl. Phys. Lett., vol. 82, p. 2353 (2003)
  • Environment and structure influence on DNA conduction, Ch. Adessi, S. Walch and M. P. Anantram, Phys. Rev. B, vol. 67, p. 81405(RC) (2003)

Nanodevice Modeling and Theory (Semiconductor and Superconductor)

  • Comparison of Non-Equilibrium Green’s Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation, H. Tsuchiya, A. Svizhenko, M. P. Anantram, M. Ogawa and T. Miyoshi, Journal of Computational Electronics, v. 4, p. 35 (2005)
  • Role of Scattering in Nanotransistors, A. Svizhenko and M. P. Anantram, IEEE Trans. Elec. Dev., vol. 50, p. 1459-1466 (2003)
  • Two Dimensional Quantum Mechanical Modeling of Nanotransistors, A. Svizhenko, M. P. Anantram, T. R. Govindan, B. Biegel and R. Venugopal, J. of Appl. Phys., vol. 91, p. 2343 (2002) [PDF]
  • Charging effects in the ac conductance of a double barrier resonant tunneling structure, M. P. Anantram, Journal of Physics: Condensed Matter, vol. 10, p. 9015 (1998)
  • Current Fluctuations in Mesoscopic Systems with Superconducting Regions, M. P. Anantram and S. Datta, Phys. Rev. B, Phys. Rev B, vol. 53, p. 16390 (1996)
  • Effect of Phase-Breaking on the ac Response of Mesoscopic Systems, M. P. Anantram and S. Datta, Phy. Rev. B, vol. 51, p. 7632 (1995) [PDF]
  • Resonant Tunneling Devices: Effect of Scattering (invited), S. Datta, G. Klimeck, R. K. Lake and M. P. Anantram, Inst. Phys. Conf. Ser. No. 141, Chapter 7, p. 775 (1994)
  • Rate Equations for the Phonon Peak in Resonant Tunneling Diodes, R. K. Lake, G. Klimeck, M. P. Anantram and S. Datta, Phy. Rev. B, vol. 48, p. 15132 (1993)
  • Steady-State Transport in Mesoscopic Systems Illuminated by Alternating Fields, S. Datta and M. P. Anantram, Phy. Rev. B, vol. 45, p. 13761 (1992) [PDF]
Physical Models of Computing
  • Spatially correlated qubit errors and burst-correcting quantum codes, F. Vatan, V. P. Roychowdhury, M. P. Anantram, IEEE Transactions on Information Theory, vol. 45, p. 1703 (1999)
  • Metastable states and information propagation in a one-dimensional array of locally coupled bistable cells, M. P. Anantram and V. P. Roychowdhury, Journal of Applied Physics, vol. 85, p. 1622 (1999)