UW Electrical Engineering

 

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Selected Recent Work

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  • Subthreshold  electron transport properties of ultrascaled phase change memory, J. Liu et. al, Electron Device Letters [PDF]
  • Modeling of electron transport in biomolecules: Applications to DNA, with Jianqing Qi, IEDM [PDF]
  • A multi-scale analysis of the crystallization of amorphous germanium telluride using ab initio simulations and classical crystallization theory, Jie Liu et. al, Journal of Applied Physics [PDF]
  • A nested dissection approach to modeling transport in nanodevices: Algorithms and applications, Ulrich Hetmaniuk et. al, International Journal for Numerical Methods in Engineering, [PDF]
  • H+-type and OH−-type biological protonic semiconductors and complementary devices, Deng, Marco Roland et. al, Scientific Reports [PDF]
    http://www.nature.com/srep/2013/131003/srep02481/pdf/srep02481.pdf
  • Core-shell silicon nanowire solar cells, Michael Adachi et. al, Scientific Reports [PDF]
  • Low-bias electron transport properties of germanium telluride ultrathin films, Jie Liu et. al, Journal of Applied Physics [PDF]
  • Unified model for conductance through DNA with the Landauer-Buttiker formalism, Jianqing Qi et. al, Physical Review B [PDF]
  • A Reversible Modulation of Spontaneous Emission by Strain in Silicon Nanowires, Daryoush Shiri et. al, Scientific Reports PDF,
    http://www.nature.com/srep/2012/120615/srep00461/full/srep00461.html]
  • A polysaccharide bioprotonic field-effect transistor, Zhong, Rolandi et. al, Nature Communications [PDF, http://www.nature.com/ncomms/journal/v2/n9/abs/ncomms1489.html]
  • Scaling Analysis of Nanowire Phase Change Memory, Jie Liu et. al, Electron Device Letters [PDF]
  • High Gain Multiple-Gate Photodetector with Nanowires in the Channel, Anita Fadavi et. al, Electron Device Letters [PDF]
  • Optical Properties of Crystalline-Amorphous Core-Shell Silicon Nanowires, Michael Adachi et. al, Nano Letters [PDF]
  • High-field hole transport in silicon nanowires, Amit Verma et al, Nano Letters [PDF]
  • Strain induced change of bandgap and effective mass in silicon nanowires, Daryoush Shiri et al, Appl. Phs. Lett. [PDF]
  • Carrier-phonon interaction in small cross-sectional silicon nanowires, Andrei Buin et. al, J. Appl. Phys [PDF]
  • Modeling of Nanoscale Devices, Proc. IEEE [PDF]
  • Significant Enhancement of Hole Mobility in [110] Silicon Nanowires Compared to Electrons and Bulk Silicon, Andrei Buin et. al, Nano Letters [PDF]
  • Multi-dimensional modeling of nanotransistors, IEEE Trans. Elec. Dev. [PDF]
  • A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs
  • Influence of defects on nanotube transistor performance, Neophyto et. al, Appl. Phys. Lett. [PDF]
  • Carbon nanotube electronic devices [PDF]
  • Effect of scattering and contacts on current and electrostatics in carbon nanotubes, Svizhenko et. al, Phys. Rev. B [PDF]
  • Inter-base electronic coupling for transport through DNA, Mehrez et. al, Phys. Rev. B [PDF]
  • Analysis of band gap formation in squashed arm-chair CNT, Mehrez et. al, Phys. Rev B [PDF]