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Scott Dunham


Scott Dunham
Professor
Materials and Devices
218 EE/CSE
Box 352500
University of Washington
Seattle, WA 98195
Phone: (206) 543-2189
E-mail: dunham@ee.washington.edu

PhD EE Stanford University, 1985
MS EE Stanford University, 1980
BS EE Cornell University, 1979


[Biosketch] [Honors] [Research Interests] [Selected Publications] [Recent Conference Papers] [Books] [Recent Grad Students] [Editorships]


Biosketch

Scott Dunham was born in 1958 in Brattleboro, Vermont. He received a B.S. in Electrical Engineering from Cornell University in 1979, and M.S. and Ph.D. degrees in Electrical Engineering from Stanford University in 1980 and 1985. He was a faculty member in the Electrical and Computer Engineering Department at Boston University from 1985 to 1999. In 1999, he joined the Electrical Engineering Department at the University of Washington. He is also an adjunct faculty member in Materials Science and Engineering. His research is focused on the modeling of microfabrication processes and device behavior.

Scott Dunham is a member of the IEEE Electron Devices Society, the Materials Research Society, The American Physical Society and the Electrochemical Society. He is currently Associate Editor for Diffusion and Silicon Processing for the Journal of Electronic Materials. He is also a member of the Front End Processes (FEP) Technical Working Group for the International Technology Roadmap for Semiconductors (ITRS'99).

Honors

NSF Research Initiation Award, 1990
IBM Faculty Development Award, 1987
Stanford University Graduate Fellowship (declined), 1979-1980
Bell Labs OYOC Fellowship, 1979-1980
First in graduating class, Cornell University, College of Engineering, 1979
Eastman Kodak Scholarship, Cornell University, 1978-1979

Research Interests

Selected Publications

"A Quantitative Model for the Coupled Diffusion of Phosphorus and Point Defects in Silicon," S. T. Dunham, J. Electrochem. Soc. 139, 2628 (1992).

"Consistent Quantitative Model for the Spatial Extent of Point Defect Interactions in Silicon," A. M. Agarwal and S. T. Dunham, J. Appl. Phys. 78, 5313 (1995).

"Atomistic Models of Vacancy-Mediated Dopant Diffusion in Silicon," S. T. Dunham and C. D. Wu, J. Appl. Phys. 78, 2362 (1995).

"Moment Expansion Approach to Calculate Impact Ionization Rate in Submicron Silicon Devices," K. Sonoda, M. Yamaji, K. Taniguchi, and C. Hamaguchi, S. T. Dunham, J. Appl. Phys. 80, 5444 (1996).

"A Predictive Model for Transient Enhanced Diffusion Based on Evolution of {311} Defects," A. H. Gencer and S. T. Dunham, J. Appl. Phys. 81, 631 (1997).

"A Viscous Compressible Model for Stress Generation/Relaxation in SiO_2," M. Navi and S. T. Dunham, J. Electrochem. Soc. 144, 367 (1997).

"Accurate and Efficient Modeling of Nucleation and Growth Processes," Scott T. Dunham, Iuval Clejan, and Alp H. Gencer, Mat. Sci. Eng. A 238, 152 (1997).

"Modeling of Dopant Diffusion in Silicon," Scott T. Dunham, Alp H. Gencer and Srinivasan Chakravarthi, IEICE Trans. Electron. E82-C, 800 (1999). [invited]

"First-principles study of boron diffusion in silicon," W. Windl, M. M. Bunea, R. Stumpf, S. T. Dunham, M. Masquelier, Phys. Rev. Lett. (1999).

"Transition metal defect behavior and Si density of states in the processing temperature regime," A. L. Smith, S. T. Dunham, L. C. Kimerling, Physica B 273-274 , 358 (1999).

"Monte Carlo study of vacancy-mediated diffusion in silicon," M. M. Bunea and S. T. Dunham, Phys. Rev. B 61 (2000).

Recent Conference Papers

"3D Atomistic Simulations of Deep Submicron Device Fabrication," Marius M. Bunea and Scott T. Dunham, in Semiconductor Process and Device Performance Modeling, S. Dunham and J. Nelson, eds. (Mat. Res. Soc. Proc. 490, Pittsburgh, PA, 1998) pp. 3--8.

"DOPDEES/PMM: A System for Portable Model Description," Alp H. Gencer and Scottt T. Dunham, in Proceedings of the First International Conference on Modeling and Simulation of Microsystems, Semiconductors, Sensors and Actuators (MSM), A. Wild, P. Renaud, M. Laudon and B. Romanowicz, eds. (Int. Assoc. Math. Comp. Mod., St. Louis, 1998).

"Moment-Based Modeling of Extended Defects for Simulation of TED: What Level of Complexity is Necessary?" Alp H. Gencer and Scott T. Dunham, in Silicon Front End Technology --- Materials Processing and Modeling, N. Cowern, P. Griffin, D. Jacobsen, P. Packan, and R. Webb, eds. (Mat. Res. Soc. Proc. 532, Pittsburgh, PA, 1998) pp. 105-110.

"Influence of Extended Defect Models on Prediction of Boron Transient Enhanced Diffusion," Srinivasan Chakravarthi and Scott T. Dunham, in Silicon Front End Technology --- Materials Processing and Modeling, N. Cowern, P. Griffin, D. Jacobsen, P. Packan, and R. Webb, eds. (Mat. Res. Soc. Proc. 532, Pittsburgh, PA, 1998).

"A Simple Continuum Model for Simulation of Boron Interstitial Clusters based on Atomistic Calculations," Srinivasan Chakravarthi and Scott T. Dunham, in Simulation of Semiconductor Processes and Devices 1998, K. De Meyer, S. Biesemans, eds. (Springer-Verlag, Wien, 1998) pp. 55--58.

"Self-Consistent Kinetic Lattice Monte Carlo," Andrew Horsfield, Scott T. Dunham and Hideaki Fujitani, in Multiscale Modeling of Materials, V. Bulatov, T. de la Rubia, N. Ghoniem, E. Kaxiras and R. Phillips, eds. (Mat. Res. Soc. Proc. 538, Pittsburgh, PA, 1999).

"Beyond TED: Understanding Boron Shallow Junction Formation," Scott T. Dunham, Srinivasan Chakravarthi and Alp H. Gencer, 1998 IEDM Technical Digest, pp. 501-504.

"Energetics and Kinetics of Extended {311} Defects in Si," Pavel Fastenko and Scott T. Dunham, in Process Modeling and Physics in Semiconductor Technology, C. S. Murthy, G. R. Srinivasan and S. T. Dunham, eds. (Electrochem. Soc., Pennington, NJ, 1999).

"The Pieces of the Puzzle: Challenges in Modeling of Transient Enhanced Diffusion," Alp. H. Gencer and Scott T. Dunham, in Process Modeling and Physics in Semiconductor Technology, C. S. Murthy, G. R. Srinivasan and S. T. Dunham, eds. (Electrochem. Soc., Pennington, NJ, 1999).

"Modeling Extended Defect Formation and Dissolution: Analytical Formulation of Kinetic Precipitation Model," Alp H. Gencer and Scott T. Dunham, in Si Front-End Processing---Physics and Technology of Dopant-Defect Interactions H.-J. Gossmann, T. Haynes, A. N. Larsen, M. Law, S. Odanaka eds., (Mat. Res. Soc. Proc., Pittsburgh, PA, 1999).

"Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon," Wolfgang Windl, Roland Stumpf, Michael P. Masquelier, Marius Bunea, Scott T. Dunham, in Si Front-End Processing---Physics and Technology of Dopant-Defect Interactions H.-J. Gossmann, T. Haynes, A. N. Larsen, M. Law, S. Odanaka eds., (Mat. Res. Soc. Proc., Pittsburgh, PA, 1999).

"Atomistic Simulations of Damage Evolution in Silicon," Marius M. Bunea, Pavel Fastenko and Scott T. Dunham, in Si Front-End Processing---Physics and Technology of Dopant-Defect Interactions H.-J. Gossmann, T. Haynes, A. N. Larsen, M. Law, S. Odanaka eds., (Mat. Res. Soc. Proc., Pittsburgh, PA, 1999).

"Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes," Scott T. Dunham, in Modeling and Simulation of Microsystems (MSM99) (1999).

Books

"Process Physics and Modeling in Semiconductor Technology," G. R. Srinivasan, C. S. Murthy and S. T. Dunham, eds., (Electrochem. Soc. Proc. Vol. 96-4, Pennington, NJ, 1996).

"Semiconductor Process and Device Performance Modeling," S. T. Dunham and J. S. Nelson, eds., (Materials Research Soc. Proc. Vol. 490, Pittsburgh, PA, 1998).

"Process Physics and Modeling in Semiconductor Technology," C. S. Murthy, S. T. Dunham, and G. R. Srinivasan, eds., (Electrochem. Soc. Proc. Vol. 99-4, Pennington, NJ, 1999).

Recent Graduate Students

Anu Agarwal, PhD EE 1994, Boston University, "The Spatial Extent of Point Defect Interactions in Silicon: Experiments and Modeling"

Fred Wittel, PhD Applied Physics 1995, Boston University "Development and Characterization of Process Simulation Models for Diffusion and Co-Diffusion of Dopants in Silicon"

Mitra Navi, PhD EE 1998, Boston University, "Density Relaxation and Impurity Incorporation in Silicon Dioxide Films and Their Effects on Boron Diffusion"

Alp Gencer, PhD EE 1999, Boston University, "Modeling and Simulation of Transient Enhanced Diffusion Based on Interactions of Point and Extended Defects"

Marius Bunea, PhD Physics (expected 2000), Boston University , "Atomistic Simulations of ULSI Processes"

Srinivasan Chakravarthi, PhD Manufacturing Engineering (expected 2000), Boston University, "Diffusion and Clustering of Boron during Ion Implant Annealing"

Aimee Smith, PhD Materials Science and Engineering (expected 2000), MIT, "Process Optimization of Solar Cells through Defect Studies, Process Simulation, and Contact Development" (joint with Prof. L. Kimerling)

Pavel Fastenko, PhD EE (expected 2001), University of Washington, "Application of Molecular Dynamics to Silicon Process Modeling"

Can Dong Wu, MS EE 1994, Boston University, "Monte Carlo Lattice Simulations of Vacancy-Mediated Diffusion in Silicon"

Soumya Banerjee, MS EE 1996, Boston University, "Modeling of Interactions Between Grain Growth and Dopant Diffusion in Polysilicon Films"

Brendon Murphy, MS EE 1998, Boston University, "Dopant Segregation at Si/SiO2 Interfaces"

Matthew Emsley, MS EE (expected 1999), "Silicon Resonant Cavity Silicon Polarization-Sensitive Photodetectors" (joint with Prof. M. S. Unlu)

Editorships

Associate Editor for the Journal of Electronic Materials (Diffusion and Silicon Processing)

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