This work seeks to address the challenges associated with implementing neural interface electronics using standard Complementary metal-oxide-semiconductor (CMOS) technologies, to enable single-chip, bidirectional brain computer interfaces (BBCI). Specific barriers currently being addressed are the seeming incompatibility between low-voltage CMOS devices and the required high voltages resulting from biphasic neural stimulation. These implantable devices have potential applications in neural stimulation systems to address numerous neurological disorders and enable neural prosthetics.
