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This equipment deposits thin films of dielectric materials by means of physical sputtering that occurs in an RF plasma discharge of an inert gas. Typical deposition rates are 100 nm per hour. |
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J-arm sputter-down configuration. Contains three 6-inch diameter water cooled targets with a fourth position for substrate etching. 1000 Watt RF (13.56 MHz) power supply. CTI Cryogenics cryopumped high vacuum chamber with electric hoist. MKS wide range thermocouple, capacitance, and ionization vacuum instrumentation. Closed-loop feedback pressure control using servomotor on venetian blind throttle valve. |
Allowable substrates are Si, GaAs, Al2O3, SiC, SiO2, and InP. Existing bonded-up targets include SiO2, Si3N4, 7059 glass, 7570 Iwaki glass, 7740 pyrex glass, and soda-lime glass. No metals are allowed in this system in order to allow it to continue to produce optical quality thin films. Sputtering gases include Ar, N2, O2, and mixtures. |
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Operational |
EE/CSE B023; EE MFL Clean Room |
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