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This is a 2-inch diameter quartz tube furnace designed for heat treating substrates that do not significantly outgas or decompose. It is used mainly for contact annealing, sintering, or alloying of substrates of up to 1-inch diameter. |
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Three zone (6", 12", 6") heating elements, independently controllable up to 1200 C. K-type thermocouple instrumentation. |
Allowable substrates are Si, GaAs, Al2O3, SiC, SiO2, and InP. Substrates may contain various metallizations. |
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Operational |
EE/CSE B029; EE MFL Processing Room |
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