Model Description  This model is an accurate power BJT model that includes static and dynamic quasisaturation effects. The model is based on the lumpedcharge methodology.  
Model Parameters  xmax = 1.2,
b = 3, va = 320, Qe = 1.67e5, Qavg_b = 2.27e8, Qc = 1e9, Qi = 1.33e14, Qnu = 1.05e11, Tno = 2.274e8, Taub = 3e5, Taue = 1e7, Tauc = 1e7 
Normalized drift+base width
Electron/hole mobility ratio Early voltage Emitter fixed charge Base fixed charge Collector fixed charge Intrinsic charge Epilayer fixed charge Lowbias base transit time Base carrier lifetime Emitter carrier lifetime Collector carrier lifetime 
Performance Level:  ACCURATE  
Quality Classification:  1B
Only limited testing has been performed. Parameter extraction is available. 

Original Support for Model Development  CDADIC, 199597  
Documentation  This model is described in Yafei
Bi, "Compact Modeling of Power Bipolar Transistor and Parasitic Bipolar
Transistor in LDMOS Structures", MSEE Thesis, University of Washington,
December 1998
The model represents a revision of the model described in N.Talwakar et al, " Power BJT Model for Circuit Simulation", IEEE PESC Power Electronics Specialists Conf. Record, Baveno, Italy, June 1996, pp. 5055. A further description of this model and details on parameter extraction are given in N.Talwalkar, "Modeling the power bipolar junction transistor using the lumpedcharge method", MSEE Thesis, University of Washington, June 1996. 

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