Power BJT Model

Model Description This model is an accurate power BJT model that includes static and dynamic quasi-saturation effects. The model is based on the lumped-charge methodology.
Model Parameters xmax = 1.2, 
b = 3, 
va = 320,
Qe = 1.67e-5, 
Qavg_b = 2.27e-8, 
Qc = 1e-9, 
Qi = 1.33e-14, 
Qnu = 1.05e-11, 
Tno = 2.274e-8, 
Taub = 3e-5, 
Taue = 1e-7, 
Tauc = 1e-7 
Normalized drift+base width
Electron/hole mobility ratio
Early voltage
Emitter fixed charge 
Base fixed charge 
Collector fixed charge 
Intrinsic charge
Epi-layer fixed charge
Low-bias base transit time
Base carrier lifetime
Emitter carrier lifetime
Collector carrier lifetime
Performance Level: ACCURATE
Quality Classification: 1B
Only limited testing has been performed.
Parameter extraction is available.
Original Support for Model Development CDADIC, 1995-97
Documentation This model is described in Yafei Bi, "Compact Modeling of Power Bipolar Transistor and Parasitic Bipolar Transistor in LDMOS Structures", MSEE Thesis, University of Washington, December 1998 

The model represents a revision of the model described in N.Talwakar et al, " Power BJT Model for Circuit Simulation", IEEE PESC Power Electronics Specialists Conf. Record, Baveno, Italy, June 1996, pp. 50-55. 

A further description of this model and details on parameter extraction are given in N.Talwalkar, "Modeling the power bipolar junction transistor using the lumped-charge method", MSEE Thesis, University of Washington, June 1996. 

Download Model Source Code

 Latest update: April 4, 2000 by plauritz@ee.washington.edu