Model Description  This physically based
GTO model
provides most of the important device characteristics under static and
dynamic conditions. The model includes t accurate dynamic turnoff
anode
current and voltage waveforms, turnon and turnoff conductivity
modulation
effects, and the negative resistance gatecathode IV characteristic.
The
model is designed using the lumpedcharge methodology.
This model is available as a commercialized generic model in the Saber simulator with the template name: gto2.sin. 

Model
Parameters: Commercial Model 
Model parameters and default values for the commercial version are given in Analogy's SaberBook help system under "gto2".  
Model Parameters: University Model  QGn=3.472e17,
QBp=4e13, QG=1.6e3, QB=5e6, Ij3BK0=1e14, Vj3BK0=20, n0=2, vj2BK0=5k, rab=0.5, fv=6, Tp10= Tp20=34u, Tp30=Tp40=5u, fj2g=0.1, tauB=22.67u, tauG=6.43u 
Equilibrium
charge
in the gate Equilibrium charge in the base Equil. hole charge in P gate Equilibrium charge in N base Saturation current of J2 Breakdown voltage of J3 Breakdown voltage at J2 

Performance Level:  ACCURATE  
Quality Classification:  3A (Commercial Model)
1A (University Model) Parameter extraction is NOT available. Unlike most of the other models on this set of Web pages, parameter extraction is very difficult as the model was designed without consideration for parameter extraction. 

Original Support for Model Development  Siemens AG, 199194 (Now Infineon), NSFCDADIC, 199394  
Documentation  C. L. Ma, P. O.
Lauritzen, J. Sigg,
"A Physicsbased GTO Model For Circuit Simulation", IEEE Power
Electronics
Specialists Conference, pp. 872878, June 1995.
C. L. Ma, "Modeling of Bipolar Power Semiconductor Devices", Ph.D. Dissertation, University of Washington, Seattle, Washington, December 1994. 

Download Model Source Code  (University model only) 