|Model Description||This physically based
provides most of the important device characteristics under static and
dynamic conditions. The model includes t accurate dynamic turn-off
current and voltage waveforms, turn-on and turn-off conductivity
effects, and the negative resistance gate-cathode I-V characteristic.
model is designed using the lumped-charge methodology.
This model is available as a commercialized generic model in the Saber simulator with the template name: gto2.sin.
|Model parameters and default values for the commercial version are given in Analogy's SaberBook help system under "gto2".|
|Model Parameters: University Model||QGn=3.472e-17,
in the gate
Equilibrium charge in the base
Equil. hole charge in P gate
Equilibrium charge in N- base
Saturation current of J2
Breakdown voltage of J3
Breakdown voltage at J2
|Quality Classification:||3A (Commercial Model)
1A (University Model)
Parameter extraction is NOT available. Unlike most of the other models on this set of Web pages, parameter extraction is very difficult as the model was designed without consideration for parameter extraction.
|Original Support for Model Development||Siemens AG, 1991-94 (Now Infineon), NSF-CDADIC, 1993-94|
|Documentation||C. L. Ma, P. O.
Lauritzen, J. Sigg,
"A Physics-based GTO Model For Circuit Simulation", IEEE Power
Specialists Conference, pp. 872-878, June 1995.
C. L. Ma, "Modeling of Bipolar Power Semiconductor Devices", Ph.D. Dissertation, University of Washington, Seattle, Washington, December 1994.
|Download Model Source Code||(University model only)|