|Model Description||This Punch-Through
IGBT model was developed with the purpose of creating a Basic level
IGBT model with simple, electrical measurement-based parameter
extraction. The model combines an empirical MOSFET with a lumped-charge
based BJT model and provides provide good turn-off and turn-on
transient wafeforms. This model fills a critical need for a Basic
level IGBT model.
Development of this model was begun during 1999 by P. O. Lauritzen while a Danfoss Visiting Profess at Aalborg University in Denmark
An earlier version of this model was developed by Subramanian
Rajagopalan and K.N. Bhat of
IIT (Indian Institute of Technology), Madras, India and P. O. Lauritzen
who in 1997 was a Fulbright Senior Lecturer at IIT, Madras. This model
developed as part of a May 1998 Bachelor of Technology Thesis project
the EE Dept. at IIT, Madras.
|Model Parameters||The 17 model parameters are given in the paper below as well as in the model source code.|
This model has been used successfully by several people .Parameter extraction is available.
|Original Support for Model Development||Danfoss Professor
Programme at Aalborg University in Denmark.
|Documentation||This model is described in the paper by P. O. Lauritzen, G. K Andersen, M. Helsper, A Basic IGBT Model with Easy Parameter Extraction, IEEE Power Electronics Sprcialists Conf., Vancouver, BC, Canada, June 2001.|
|Download Model Source Code||Saber
Verilog-A HDL Model