| Model Description | This physically based SCR model
provides most of the important device characteristics under static and
dynamic conditions. The model includes turn-on and turn-off conductivity
modulation effects, accurate reverse recovery waveforms, and the negative
resistance gate-cathode I-V characteristic. The model is designed using
the lumped-charge methodology.
This model is available as a commercialized generic model from Analogy, Inc. with the template name: scr2.sin. |
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| Model Parameters:
Commercial Model |
Model parameters and default values for the commercial version are given in Analogy's SaberBook help system under "scr2". | ||
| Model Parameters: University Model | QGn=3.472e-17,
QBp=4e-13, QG=1.6e-3, QB=5e-6, Tp10=34u, Tp20=34u, Tp30=5u, rsh=10, fv=6, Vj2BK0=6k, Vj1BK0=6k, fj2g=.2, cj20=100p, tauB=22.67u, tauG=6.43u, mrlow=2.7, murhigh=1.9, phi12=0.6 |
Equilibrium electron
charge in P-gate
Equilibrium hole charge in N-base Equilibrium hole charge in P-gate Equil. electron charge in N-base Hole transit time from 2 to 3 Hole transit time from 3 to 4 Hole transit time from 5 to 6 Cathode short Base to gate volume ratio Breakdown voltage of J2 junction Breakdown voltage of J1 junction Gate region contraction factor Zero-biased junction J2 cap Base lifetime Gate lifetime Mobility ratio in low doped regions Mobility ratio in high doped regions Built-in potential of P+-N- junction |
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| Performance Level: | ACCURATE | ||
| Quality Classification: | 3A (Commercial Model)
1A (University Model) Parameter extraction is NOT available. Unlike most of the other models on this set of Web pages, parameter extraction is very difficult as the model was designed without consideration for parameter extraction. |
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| Original Support for Model Development | Siemens AG, 1991-94, NSF-CDADIC, 1993-94 | ||
| Documentation | C. L. Ma, P. O. Lauritzen, J. Sigg,
"Modeling of High-Power Thyristors Using the Lumped-Charge Modeling Technique",
6th European Conference on Power Electronics and Applications, Spain, 1995.
C. L. Ma, "Modeling of Bipolar Power Semiconductor Devices", Ph.D. Dissertation, University of Washington, Seattle, Washington, December 1994. |
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| Download Model Source Code | (University model only) | ||