SCR with Dynamic Charge Storage


Model Description This physically based SCR model provides most of the important device characteristics under static and dynamic conditions. The model includes turn-on and turn-off conductivity modulation effects, accurate reverse recovery waveforms, and the negative resistance gate-cathode I-V characteristic. The model is designed using the lumped-charge methodology. 

This model has been available as a commercialized generic model in the Saber simulator with the template name: scr2.sin. 

Model Parameters: University Model QGn=3.472e-17, 
QBp=4e-13, 
QG=1.6e-3, 
QB=5e-6, 
Tp10=34u, 
Tp20=34u, 
Tp30=5u, 
rsh=10, 
fv=6, 
Vj2BK0=6k, 
Vj1BK0=6k, 
fj2g=.2, 
cj20=100p, 
tauB=22.67u,
tauG=6.43u, 
mrlow=2.7, 
murhigh=1.9, 
phi12=0.6 
Equilibrium electron charge in P-gate 
Equilibrium hole charge in N-base 
Equilibrium hole charge in P-gate 
Equil. electron charge in N-base 
Hole transit time from 2 to 3 
Hole transit time from 3 to 4 
Hole transit time from 5 to 6 
Cathode short 
Base to gate volume ratio 
Breakdown voltage of J2 junction 
Breakdown voltage of J1 junction 
Gate region contraction factor 
Zero-biased junction J2 cap 
Base lifetime 
Gate lifetime 
Mobility ratio in low doped regions 
Mobility ratio in high doped regions 
Built-in potential of P+-N- junction
Performance Level:  ACCURATE
Quality Classification:  3A (Commercial Model)
1A (University Model)

Parameter extraction is NOT available. Unlike most of the other models on this set of Web pages, parameter extraction is very difficult as the model was designed without consideration for parameter extraction. 

Original Support for Model Development Siemens AG, 1991-94 (Now Infineon), NSF-CDADIC, 1993-94
Documentation C. L. Ma, P. O. Lauritzen, J. Sigg, "Modeling of High-Power Thyristors Using the Lumped-Charge Modeling Technique", 6th European Conference on Power Electronics and Applications, Spain, 1995. 

C. L. Ma, "Modeling of Bipolar Power Semiconductor Devices", Ph.D. Dissertation, University of Washington, Seattle, Washington, December 1994.

Download Model Source Code (University model only)



Latest update: May20, 2008 by plauritz@ee.washington.edu