model was specifically designed to provide basic performance for
usage in circuit simulation. This model is intended to replace the
behavioral and two-transistor macromodels found in most circuit
The model is suitable for both SCR and
It provides a charge-based reverse recovery during SCR turn-off and
turn-off and turn-on anode current characteristics. For the GTO, the Hr
reverse turn-off gain must be specified. The model is free of the
artifacts produced by regenerative models making it suitable for
circuits where many SCR or GTO models are switching together.
This model was enhanced in 2004 with the
additon of junction capacitances, dv/dt triggering, forward breakover
and reverse breakdown.
Default parameters are typical of a 2N6397 device.
|vrm = 400,
vgt = 0.7,
i_gt = 5m,
i_hold = 6m,
rg = 25,
ron = 0.1,
roff = 10meg,
init_cond = 0,
tgt = 1u,
tau1 = 20u,
tau2 = 20u,
Hr = 0
tau_dk = 20u,
Is = 1e-12,
no = 2,
TM = 5u
|Breakover V. ( vbo = vrm
Gate trigger voltage
Positive gate trigger current
IC for initial state on or off
Turn-on time of SCR
Time constant for iA rising
Time constant for iA falling
GTO turn-off gain (SCR=0)
Carrier lifetime in SCR diode
Diode saturation current
Emission coefficient (Diode)
Turn-off transit time (Diode)
This model has been extensively used.
Parameter extraction is available.
|Support for Model Development||EPRI (Electric Power Research Institute) 1994-1995, NSF-CDADIC 1995, Danfoss Professor Programme 1999|
|Documentation||This model is described
in the paper
by K.Y. Wong, P.O. Lauritzen, S.S. Venkata, A. Sundaram, R. Adapa, "An
SCR-GTO Model Designed for a Basic Level of Model Performance",
of IEEE IAS Annual Meeting, San Diego,CA 1996.
The model is also described in the University of Washington MSEE thesis by K.Y. Wong, "A Basic SCR-GTO Model with Application to Solid-State Breaker", June 1996.
|Download Model Source Code||This model has been extensively revised and improved as part of the Danfoss Professor Programme at Aalborg University in Denmark.|