| Model Description | This SCR/GTO
model was specifically designed to provide basic performance for general
usage in circuit simulation. This model is intended to replace the common
behavioral and two-transistor macromodels found in most circuit simulators.
The model is suitable for both SCR and GTO devices. It provides a charge-based reverse recovery during SCR turn-off and continuous turn-off and turn-on anode current characteristics. For the GTO, the Hr reverse turn-off gain must be specified. The model is free of the simulation artifacts produced by regenerative models making it suitable for complex circuits where many SCR or GTO models are switching together. |
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| Model Parameters and
Default Values
Default parameters are typical of a 2N6397 device. |
vrm = 400,
vgt = 0.7, i_gt = 5m, i_hold = 6m, rg = 25, ron = 0.1, roff = 10meg, init_cond = 0, tgt = 1u, tau1 = 20u, tau2 = 20u, Hr = 0 tau_dk = 20u, Is = 1e-12, no = 2, TM = 5u |
Breakover V. ( vbo = vrm )
Gate trigger voltage Positive gate trigger current Holding current Gate resistance On-state resistance Off-state resistance IC for initial state on or off Turn-on time of SCR Time constant for iA rising Time constant for iA falling GTO turn-off gain (SCR=0) Carrier lifetime in SCR diode Diode saturation current Emission coefficient (Diode) Turn-off transit time (Diode) |
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| Performance Level: | BASIC | |||
| Quality Classification: | 2B
This model has been extensively used. Parameter extraction is available. |
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| Support for Model Development | EPRI (Electric Power Research Institute) 1994-1995, NSF-CDADIC 1995, Danfoss Professor Programme 1999 | |||
| Documentation | This model is described in the paper
by K.Y. Wong, P.O. Lauritzen, S.S. Venkata, A. Sundaram, R. Adapa, "An
SCR-GTO Model Designed for a Basic Level of Model Performance", Proc.
of IEEE IAS Annual Meeting, San Diego,CA 1996.
The model is also described in the University of Washington MSEE thesis by K.Y. Wong, "A Basic SCR-GTO Model with Application to Solid-State Breaker", June 1996. |
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| Download Model Source Code | This model has been extensively revised and improved as part of the Danfoss Professor Programme at Aalborg University in Denmark. | |||