Model Description  This lumpedcharge VDMOS model provides a physicallybased compact model for discrete power MOSFET devices. This model is designed to replace the macromodels commonly used for power MOSFETs in many simulators. The present model has been extensively revised from the original 1995 version to improve robustness, simulation speed and accuracy. The current model includes moderate inversion, smooth capacitance characteristics for all modes of operation, and mobility effects due to high fields.  
Model Parameters and Default Values  kp = 1.70, lda = 0.0, vsat = 500, theta = 0.0, cgson = 500p, cgdon = 370p, cj0 = 550p, cgov = 0.0, vtb = 3.3, phisb = 1.0, vfbd = 0.775, vtd = 0.4, phidb = 0.8, iso = 5e10, no = 1.5, tau = 0.1e6, tm = 10e6, m = 0.45, rg = 0.05, rd = 0.003, 
Transconductance param. Channel length modulation Velocity saturation param. Mobility reduction due to vgs Gatesource ON capacitance Gatedrain ON capacitance ON junction capacitance Overlap capacitance Pbody threshold voltage Pbody built in voltage Drainsurface flatband voltage Ndrain threshold voltage Nbody built in voltage Reverse saturation current Emission coefficient Carrier lifetime Transit time Junction gradient factor Gate internal resistance Drain internal resistance 
Performance Level:  ACCURATE  
Quality Classification:  2B This model has been extensively used. All parameters can be extracted from basic electric measurements but optimization could be helpful for a few of the parameters. 

Original Support for Model Development  CDADIC, 199298  
Documentation  The current version of
this VDMOS
model is described in the MSEE Thesis of Yeshwant Subramanian at the
University
of Washington, "Development of Compact Vertical and Lateral DMOS
Models",
August 1998.
Simulation data is also given in Yeshwant Subramanian, P. O. Lauritzen, K.R. Green, "Two LumpedCharge Based Power MOSFET Models", Proc. of IEEE Workshop on Computers in Power Electronics, Como, Italy, July1998, pp. 110. The 1995 version of this VDMOS model is described in the paper by I. Budihardjo and P. O. Lauritzen, " The lumpedcharge power MOSFET model, including parameter extraction", IEEE Trans. Power Electronics, Vol. 10, No. 5, May 1995. Warning, many of the equations in this paper have major typographical errors. Corrected copies are available here. The 1995 version is also in the 1995 University of Washington Ph.D. dissertation by Irwan Budihardjo, "A charge based power MOSFET model". 

Application Information  Power converter
application data
is given in I. Budihardjo, P. O. Lauritzen, C. Xu, "Simulation of High
Frequency PWM and QuasiResonant Converters Using the LumpedCharge
Power
MOSFET Model, IEEE APEC Proc., pp.10421048, Feb. 1994.
Application of the model to RF power applications is given in the Georgia Tech Ph.D. Dissertation of John H. Bordelon, "A LargeSignal Model for the RF Power MOSFET", June 1999. 

Model Source Code 