Modeling and Simulation of Silicon Wafer Preparation

Principal Investigator
Scott Dunham

Sponsor(s)
North Carolina State University

Award Period
04/01/2000 - 03/31/2008

Abstract
The aim of this work is to develop a comprehensive gettering simulator, with characterized models for diffusion, segregation and precipitation of a wide range of mediated dopant diffusion, impurity-impurity pairing, and point defect agglomeration (voids, dislocation loops, (311) defects). The simulator will be developed within a flexible framework that allows rapid model implementation. The work will have extensive interactions with other SiWEDS projects working on experimental gettering studies, and modeling of precipitation of metals and oxygen.

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